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MR0A8ACYS35

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MR0A8ACYS35

MRAM, 128KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

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NXP Semiconductors presents the MR0A8ACYS35, a parallel MRAM component from the MR0A8 series. This memory device offers a density of 1Mbit, organized as 128K words by 8 bits, providing 131,072 words of storage. It operates asynchronously with a maximum access time of 35ns and a write cycle time of 35µs. The component supports a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V, and features low standby current of 12mA. Data retention is rated for a minimum of 20 years. The MR0A8ACYS35 is housed in a 44-lead TSOP2 package with a terminal pitch of 0.8mm, suitable for surface mounting. Operating temperature spans from -40°C to +85°C. This MRAM is engineered for applications demanding high endurance and fast write speeds, commonly found in industrial control, automotive systems, and data logging.

Additional Information

Series: MR0A8RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density1048576.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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