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MR0A16ATS35C

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MR0A16ATS35C

MRAM, 64KX16, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

The NXP Semiconductors MR0A16ATS35C is a 64K x 16 parallel MRAM component from the MR0A16 series. This non-volatile memory offers a memory density of 1Mb with an asynchronous operating mode and a maximum access time of 35ns. It features a 16-bit data width and a 65,536-word count. The device operates within a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V, and supports a temperature range from 0°C to 70°C. Packaged in a 44-lead TSOP2 (PDSO44) with a 0.8mm terminal pitch, it is designed for surface mounting. Key specifications include a maximum write cycle time of 35µs and a standby current of 12mA. Data retention is guaranteed for a minimum of 20 years. This component finds application in industrial, automotive, and consumer electronics where persistent data storage is critical.

Additional Information

Series: MR0A16RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density1048576.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization64KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0350000000000000

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