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MCM5L4100AZ70

Fast Page DRAM, 4MX1, 70ns, CMOS, PZIP20

Manufacturer: NXP Semiconductors

Categories: DRAMs

Quality Control: Learn More

NXP Semiconductors MCM5L4100AZ70 is a 4M x 1 Fast Page DRAM operating at 70ns access time. This CMOS component features a memory density of 4194304 bits and utilizes a PZIP20 package with through-hole mounting. The MCM5L4100 series memory IC type offers separate I/O characteristics and 3-state output capabilities. Designed for a nominal supply voltage of 5V, it operates within a temperature range of 0°C to 70°C. This component is suitable for applications requiring high-speed data access in industrial and consumer electronics. The MCM5L4100AZ70 employs a 1024 refresh cycle requirement and does not support self-refresh.

Additional Information

Series: MCM5L4100RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max70.0000000000000000
I_O_TypeSEPARATE
JESD_30_CodeR-PZIP-T20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_Equivalence_CodeZIP20,.1
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles1024
Self_RefreshNo
Standby_Current_Max0.000200000000000
Supply_Current_Max100.000000000000000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch1.270
Terminal_PositionZIG-ZAG

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