MCM54100AZ80
Fast Page DRAM, 4MX1, 80ns, CMOS, PZIP20Manufacturer: NXP Semiconductors
Categories: DRAMs
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NXP Semiconductors MCM54100AZ80 is a 4 Megabit (4M x 1) CMOS Fast Page DRAM with an access time of 80ns. This component features a 20-pin Plastic ZIP package (R-PZIP-T20) with through-hole mounting and a zig-zag terminal configuration. Designed for applications requiring efficient data access, it operates with a nominal supply voltage of 5V and supports a refresh cycle of 1024. The device is suitable for use in various computing and embedded systems where reliable memory performance is critical. Typical industries include consumer electronics and industrial automation. The MCM54100 series memory IC offers a 4Mx1 organization, delivering a total memory density of 4,194,304 bits.
Additional Information
Series: MCM54100RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 80.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Equivalence_Code | ZIP20,.1 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 1024 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 85.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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