MCM54100AZ70
Fast Page DRAM, 4MX1, 70ns, CMOS, PZIP20Manufacturer: NXP Semiconductors
Categories: DRAMs
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NXP Semiconductors MCM54100AZ70 is a 4M x 1 Fast Page DRAM operating at CMOS technology with a maximum access time of 70ns. This memory device features a 4194304-bit capacity and a 4M x 1 organization, utilizing a Fast Page mode for enhanced data throughput. The MCM54100 series component is housed in a 20-terminal PZIP (Plastic Zip) package, designed for through-hole mounting with a ZIG-ZAG terminal position. It operates from a nominal supply voltage of 5V and supports refresh cycles of 1024. The output characteristics are 3-state, and it does not support self-refresh. This component is suitable for applications within the industrial and consumer electronics sectors demanding reliable memory solutions.
Additional Information
Series: MCM54100RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Equivalence_Code | ZIP20,.1 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 1024 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 100.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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