MCM54100AZ60
Fast Page DRAM, 4MX1, 60ns, CMOS, PZIP20Manufacturer: NXP Semiconductors
Categories: DRAMs
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The NXP Semiconductors MCM54100AZ60 is a 4Mb Fast Page DRAM organized as 4M x 1 bit. This CMOS component features a maximum access time of 60ns and utilizes separate I/O. It operates from a nominal 5V supply and is housed in a 20-pin Plastic ZIP (PZIP) package, designed for through-hole mounting. The MCM54100 series memory IC is suitable for applications requiring efficient data access within systems that benefit from its 4,194,304 word count and 1024 refresh cycles. Its specifications lend themselves to use in various electronic equipment, including industrial control systems and telecommunications infrastructure. The component offers 3-state outputs and a standby current of 1mA, with a maximum supply current of 120mA.
Additional Information
Series: MCM54100RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 60.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Equivalence_Code | ZIP20,.1 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 1024 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 120.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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