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NC1M120C75HTNG

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NC1M120C75HTNG

SiC MOSFET N 1200V 75mohm 47A 4

Manufacturer: NovuSem

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 1200 V 47A (Tc) 288W (Ta) Through Hole TO-247-4L

Additional Information

Series: NC1MRoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs75mOhm @ 20A, 20V
Power Dissipation (Max)288W (Ta)
Vgs(th) (Max) @ Id2.8V @ 5mA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+20V, -5V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 1000 V

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