PDTD123YT/APGVL
TRANS PREBIAS NPN 50V TO236ABManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTD123YT-APGVL is an NPN pre-biased bipolar transistor from the PDTD123Y series. This surface-mount component, housed in a TO-236AB package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It features integrated base resistors with values of R1 at 2.2 kOhms and R2 at 10 kOhms, facilitating simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 70 at 50mA and 5V, with a Vce saturation of 300mV at 2.5mA and 50mA. Its maximum power dissipation is 250mW, and it is supplied in bulk packaging. This component is commonly utilized in industrial and consumer electronics applications requiring compact, high-performance switching and amplification.
Additional Information
Series: PDTD123YRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | TO-236AB |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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