PDTD123YT/APGR
TRANS PREBIAS NPN 50V TO236ABManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTD123YT-APGR is an NPN pre-biased bipolar transistor in a TO-236AB (SOT-23-3) surface-mount package. This component features integrated base resistors R1 (2.2 kOhms) and R2 (10 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage (Vce) of 50 V and a maximum collector current (Ic) of 500 mA. The device exhibits a saturation voltage (Vce(sat)) of 300 mV at 2.5 mA base current and 50 mA collector current, with a minimum DC current gain (hFE) of 70 at 50 mA and 5 V. Maximum power dissipation is 250 mW, and collector cutoff current (Ic(off)) is rated at 500 nA. This transistor is commonly utilized in industrial automation, consumer electronics, and automotive applications where simplified switching and logic functions are required. The PDTD123Y series is supplied in Bulk packaging.
Additional Information
Series: PDTD123YRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | TO-236AB |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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