PDTC143ZQBZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC143ZQBZ is an NPN pre-biased bipolar transistor (BJT) designed for surface-mount applications. This component features built-in base resistors (R1 = 4.7 kOhms, R2 = 47 kOhms) facilitating simplified circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device exhibits a transition frequency of 180 MHz and a maximum power dissipation of 340 mW. The DFN1110D-3 package, with wettable flanks, is supplied on tape and reel for automated assembly processes. This transistor type is suitable for use in various industrial and consumer electronics applications requiring efficient switching and signal amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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