PDTC143XQCZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC143XQCZ is an NPN pre-biased bipolar transistor designed for digital applications. This component features integrated base resistors (R1 = 4.7 kO, R2 = 10 kO) for simplified circuit design, eliminating the need for external biasing components. It offers a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) of up to 100mA. The transistor has a maximum power dissipation of 360mW and a transition frequency (fT) of 230MHz. Saturation voltage (Vce(sat)) is specified at 100mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V collector-emitter voltage. The PDTC143XQCZ is housed in a 3-pin DFN1412D-3 package with wettable flank terminations, suitable for surface mounting and automated assembly. This device is commonly utilized in consumer electronics, industrial automation, and automotive systems requiring efficient digital switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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