PDTC143XQBZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC143XQBZ is an NPN pre-biased bipolar junction transistor in a 3-XDFN exposed pad package (DFN1110D-3). This surface mount component features wettable flanks for enhanced solder joint inspection. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a transition frequency of 180MHz and a maximum power dissipation of 340mW. Integrated base resistors include a 4.7 kOhm (R1) and a 10 kOhm (R2) from emitter to base, providing a minimum DC current gain (hFE) of 50 at 10mA and 5V. Collector cutoff current is a maximum of 100nA. The saturation voltage (Vce Sat) is 100mV at 250µA base current and 5mA collector current. This component is suitable for applications in consumer electronics and industrial automation. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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