PDTC143EQCZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The Nexperia PDTC143EQCZ is an NPN pre-biased bipolar transistor featuring integrated base resistors for simplified circuit design. This device offers a Vce breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 230MHz. It is supplied in a compact 3-XDFN exposed pad package (DFN1412D-3) with wettable flank terminals for enhanced solder joint reliability, suitable for surface mounting. The internal base resistors are specified at 4.7 kOhms for both R1 and R2. This component is designed for applications requiring a low-power switching or amplification function, commonly found in consumer electronics and industrial control systems. Power dissipation is rated at a maximum of 360mW. The PDTC143EQCZ is delivered on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
Request a Quote
Clients Also Buy
PDTA143EQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFN
PDTC144ET/DG/B2,21
TRANS PREBIAS NPN 50V TO236AB
PDTC144EM,315
TRANS PREBIAS NPN 50V SOT883
