PDTC143EQBZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The Nexperia PDTC143EQBZ is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 30 at 10mA collector current and 5V collector-emitter voltage. The transistor has a transition frequency of 180MHz and a maximum power dissipation of 340mW. The internal base resistors are specified as 4.7 kOhms for both R1 and R2. The device is supplied in a DFN1110D-3 package and is available on tape and reel. Its low saturation voltage of 100mV at 500µA base current and 10mA collector current makes it suitable for various digital applications, including logic level shifting and switching. This transistor is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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