PDTC124XQCZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia's PDTC124XQCZ is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 230MHz and a maximum power dissipation of 360mW, it is suitable for a range of applications including digital logic, switching, and amplification circuits. The internal base resistance (R1) is 22 kOhms, and the emitter base resistance (R2) is 47 kOhms, providing a fixed bias point. The device is supplied in a compact 3-XDFN exposed pad package (DFN1412D-3) with wettable flanks, facilitating automated soldering processes. This transistor is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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