PDTC124XQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC124XQBZ is a PNP pre-biased bipolar transistor designed for general-purpose switching and amplification applications. This component features integrated base resistors (R1 = 22 kOhms, R2 = 47 kOhms) simplifying circuit design and reducing component count. It offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The PDTC124XQBZ exhibits a transition frequency of 180 MHz and a maximum power dissipation of 340mW. Supplied in a compact DFN1110D-3 package with wettable flanks for enhanced soldering quality, it is ideal for surface-mount assembly. This transistor is commonly found in automotive, industrial, and consumer electronics sectors. The device is packaged on tape and reel for automated manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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