PDTC124EQCZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC124EQCZ is an NPN pre-biased bipolar transistor in a DFN1412D-3 package. This device features integrated base resistors (R1 = 22 kOhms, R2 = 22 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transition frequency is 230 MHz, with a maximum power dissipation of 360 mW. DC current gain (hFE) is a minimum of 60 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce) is a maximum of 100 mV at 500 µA base current and 10 mA collector current. The component is supplied in Tape & Reel (TR) packaging and is suitable for surface-mount applications utilizing wettable flanks for improved solder joint inspection. This transistor finds application in various digital circuits and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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