PDTC123JQCZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC123JQCZ is an NPN - Pre-Biased Bipolar Transistor (BJT) designed for general-purpose switching and amplification applications. This component features integrated base resistors (R1 = 2.2 kOhms, R2 = 47 kOhms), simplifying circuit design and reducing component count. It offers a Collector Current (Ic) of 100 mA and a Collector-Emitter Breakdown Voltage (Vce) of 50 V. The PDTC123JQCZ boasts a transition frequency of 230 MHz and a maximum power dissipation of 360 mW. Its low saturation voltage (Vce Sat @ Ib, Ic: 100mV @ 250µA, 5mA) and high DC current gain (hFE(min) @ Ic, Vce: 100 @ 10mA, 5V) ensure efficient operation. The device is housed in a compact 3-XDFN Exposed Pad (DFN1412D-3) package with wettable flanks, supporting automated assembly. Typical industries utilizing this component include consumer electronics and industrial automation. The PDTC123JQCZ is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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