PDTC114YQCZ
TRANS PREBIAS NPN 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC114YQCZ is an NPN pre-biased bipolar transistor featuring integrated base resistors. This component offers a collector-emitter voltage breakdown of 50V and a continuous collector current of 100mA. The transistor exhibits a typical DC current gain (hFE) of 100 at 5mA collector current and 5V collector-emitter voltage. Its transition frequency is rated at 230 MHz. The device is packaged in a 3-XDFN exposed pad (DFN1412D-3) with wettable flank technology, suitable for surface mounting. The internal base resistors are specified as R1 = 10 kOhms and R2 = 47 kOhms. Power dissipation is limited to 360 mW. This component is commonly utilized in digital logic, switching applications, and general-purpose amplification across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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