PDTC114YQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC114YQBZ is a PNP pre-biased bipolar transistor in a DFN1110D-3 package. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V collector-emitter voltage. It is designed for surface mounting with wettable flank technology, offering improved solder joint inspection. With a transition frequency of 180 MHz and a maximum power dissipation of 340mW, this component is suitable for applications in consumer electronics and industrial automation. Internal base resistors are R1 (10 kOhms) and R2 (47 kOhms).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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