PDTC114EU/MIF
TRANS PREBIAS NPN 50V SOT323Manufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC114EU-MIF is an NPN pre-biased bipolar transistor designed for surface mount applications in the SOT-323 package. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 230 MHz and a power dissipation of 200 mW, it offers a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V Vce. The integrated base resistors, R1 and R2, are both 10 kOhms, simplifying circuit design. This device is suitable for use in various industrial and consumer electronics applications requiring efficient switching and amplification. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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