PDTC114ET/DG/B2,21
TRANS PREBIAS NPN 50V TO236ABManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTC114ET-DG-B2-21 is an NPN pre-biased bipolar transistor. This surface mount component, housed in a TO-236AB package, features integrated base resistors of 10 kOhms for both R1 and R2. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 230 MHz and a maximum power dissipation of 250 mW, this device is suitable for applications requiring simplified circuit design. The DC current gain (hFE) is a minimum of 30 at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is specified at 150mV maximum for 500µA base current and 10mA collector current. This device adheres to AEC-Q101 qualification standards, making it appropriate for automotive applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | TO-236AB |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 230 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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