PDTB123YT/APGR
TRANS PREBIAS PNP 50V TO236ABManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTB123YT-APGR is a PNP pre-biased bipolar transistor designed for surface mount applications. This component, qualified to AEC-Q101 standards for automotive-grade performance, features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The integrated base resistors provide a fixed bias, with R1 specified at 2.2 kOhms and R2 at 10 kOhms. This configuration offers a minimum DC current gain (hFE) of 70 at 50 mA and 5 V. The transistor dissipates a maximum power of 250 mW and is supplied in a TO-236AB (SC-59) package, suitable for high-density board designs. It is commonly utilized in automotive and industrial control applications requiring simplified digital logic interfacing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | TO-236AB |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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