PDTA143ZQCZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTA143ZQCZ is a PNP pre-biased bipolar transistor designed for surface-mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors, R1 at 4.7 kOhms and R2 at 47 kOhms, simplify circuit design. With a minimum DC current gain (hFE) of 100 at 10mA and 5V, and a transition frequency of 180 MHz, it is suitable for signal switching and amplification in various electronic systems. The device has a maximum power dissipation of 360mW and a Vce saturation of 100mV at 250µA, 5mA. It is supplied in a 3-XDFN exposed pad package (DFN1412D-3) on tape and reel, with wettable flank termination for enhanced soldering reliability. This transistor finds application in consumer electronics, industrial control, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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