PDTA143XQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The Nexperia USA Inc. PDTA143XQBZ is a PNP pre-biased bipolar transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and can handle a continuous collector current of up to 100 mA. It offers a DC current gain (hFE) of a minimum of 50 at 10 mA and 5 V, with a transition frequency of 180 MHz. The internal base resistors are specified as R1 at 4.7 kOhms and R2 at 10 kOhms. The package is a 3-XDFN exposed pad (DFN1110D-3) with wettable flanks, supplied on tape and reel. This device is suitable for applications requiring simplified circuit design in areas such as consumer electronics and industrial control systems. The maximum power dissipation is rated at 340 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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