PDTA143EQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PN: PDTA143EQBZ is a PNP, pre-biased bipolar junction transistor. This device features a collector-emitter voltage (Vce) breakdown of 50 V and a maximum collector current (Ic) of 100 mA. The transistor offers a minimum DC current gain (hFE) of 30 at 10 mA and 5 V, with a transition frequency of 180 MHz. Integrated base resistors of 4.7 kOhms are included. The saturation voltage (Vce Sat) is specified at a maximum of 100 mV at 500 µA base current and 10 mA collector current. With a maximum power dissipation of 340 mW, it is housed in a 3-XDFN exposed pad package, specifically the DFN1110D-3, suitable for surface mounting with wettable flanks. This component is supplied on a tape and reel. Applications include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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