PDTA124XT/APGR
TRANS PREBIAS PNP 50V TO236ABManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTA124XT-APGR is a PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. It is supplied in a TO-236AB (SC-59) surface mount package, delivered on tape and reel. The device integrates internal base resistors, specifically R1 at 22 kOhms and R2 at 47 kOhms, simplifying circuit design by eliminating the need for external biasing components. With a maximum power dissipation of 150mW and a DC current gain (hFE) of at least 80 at 5mA collector current and 5V collector-emitter voltage, it is suitable for applications requiring low-power switching and amplification in consumer electronics and industrial control systems. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | TO-236AB |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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