PDTA123JQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Nexperia USA Inc. PNP Pre-Biased Transistor, PDTA123JQBZ. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 180MHz and a power dissipation of 340mW, it is supplied in a 3-XDFN exposed pad package (DFN1110D-3) with wettable flanks for enhanced solder joint reliability. The integrated base resistors are R1 = 2.2 kOhms and R2 = 47 kOhms. This component is commonly found in industrial automation, consumer electronics, and automotive applications. It is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
PDTA114EU/ZLF
TRANS PREBIAS PNP 50V SOT323
PDTA114EU/ZLX
TRANS PREBIAS PNP 50V SOT323
PDTA143EQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFN
