PDTA114YQCZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PNP - Pre-Biased Bipolar Transistor, PDTA114YQCZ. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a minimum DC current gain (hFE) of 100 at 5mA and 5V, and a transition frequency of 180MHz, it is suitable for high-frequency switching applications. The internal base resistors are R1 at 10 kOhms and R2 at 47 kOhms. It offers a low Vce saturation of 100mV at 250µA and 5mA, with a maximum power dissipation of 360mW. The transistor is housed in a compact DFN1412D-3 package with wettable flank surface mount technology, supplied on tape and reel. This component is commonly employed in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | DFN1412D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 360 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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