PDTA114YQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTA114YQBZ is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors include a 10 kOhm (R1) and a 47 kOhm (R2) configuration, facilitating simplified circuit design. With a transition frequency of 180 MHz and a maximum power dissipation of 340 mW, the PDTA114YQBZ offers robust performance in a 3-XDFN exposed pad package, specifically the DFN1110D-3 variant. Its low saturation voltage of 100 mV @ 250 µA, 5 mA makes it suitable for applications requiring efficient switching and signal amplification, commonly found in consumer electronics and industrial control systems. The wettable flank mounting type ensures improved soldering reliability. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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