PDTA114EU/MIF
TRANS PREBIAS PNP 50V SOT323Manufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTA114EU-MIF is a PNP, pre-biased bipolar transistor designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 180MHz and a power dissipation of 200mW. The device is housed in a SOT-323 package. Key specifications include a minimum DC current gain (hFE) of 30 at 5mA and 5V, and a saturation voltage (Vce(sat)) of 150mV at 500µA and 10mA. The internal base resistors (R1 and R2) are both 10 kOhms. This transistor is commonly utilized in industrial automation and consumer electronics for its integrated biasing circuitry. The PDTA114EU-MIF is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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