PDTA114EQBZ
TRANS PREBIAS PNP 50V 0.1A 3DFNManufacturer: Nexperia USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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Nexperia USA Inc. PDTA114EQBZ is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features internal base resistors (R1 = 10 kOhms, R2 = 10 kOhms) for simplified circuit design. It offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage, with a transition frequency of 180 MHz. Power dissipation is rated at 340mW. The PDTA114EQBZ is supplied in a 3-XDFN exposed pad package (DFN1110D-3) and is available on tape and reel. This transistor is commonly utilized in industrial automation, consumer electronics, and automotive control systems. Saturation voltage (Vce) is a maximum of 100mV at 500µA base current and 10mA collector current. Collector cutoff current is specified at a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 340 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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