SI2304DS,215
MOSFET N-CH 30V 1.7A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. SI2304DS-215 is a TrenchMOS™ N-Channel MOSFET designed for surface-mount applications. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 1.7 A at 25°C. The Rds On is specified at a maximum of 117 mOhm at 500 mA, 10 V, with a gate-source drive voltage range between 4.5 V and 10 V. The component offers a maximum power dissipation of 830 mW at the case temperature. Key electrical parameters include a maximum Gate Charge (Qg) of 4.6 nC at 10 V and a maximum Input Capacitance (Ciss) of 195 pF at 10 V. The SI2304DS-215 is packaged in a TO-236AB (SC-59) case and supplied on tape and reel. Its operating temperature range is -65°C to 150°C (TJ). This MOSFET is utilized in automotive and industrial applications requiring efficient switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 10 V |
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