PXP9R1-30QLJ
PXP9R1-30QL/SOT8002/MLPAK33Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PXP9R1-30QLJ is a P-channel MOSFET designed for high-efficiency power applications. This component features a 30V drain-source breakdown voltage and a low on-resistance of 9.1mOhm at 10.8A and 10V Vgs. It offers continuous drain current capabilities of 10.9A at ambient temperature and 57.2A at case temperature, with a maximum power dissipation of 1.8W (Ta) and 50W (Tc). The device operates within a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 86nC at 10V and input capacitance of 2860pF at 15V. The PXP9R1-30QLJ is housed in an 8-PowerVDFN package, specifically the MLPAK33, suitable for surface mount technology. Drive voltages for optimal performance range from 4.5V to 10V. This MOSFET is utilized in various industries requiring robust power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Ta), 57.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 10.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | MLPAK33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 15 V |
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