PXP6R7-30QLJ
PXP6R7-30QL/SOT8002/MLPAK33Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PXP6R7-30QLJ is a P-channel MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 12.6A at 25°C ambient and up to 66.6A at 25°C case temperature. With a low on-resistance (Rds On) of 6.7mOhm at 12.6A and 10Vgs, it ensures efficient power transfer. The MOSFET supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 2.5V at 250µA. Key parameters include a maximum gate charge (Qg) of 133 nC at 10Vgs and input capacitance (Ciss) of 4400 pF at 15Vds. Power dissipation is rated at 1.8W (Ta) and 50W (Tc). This component is housed in an 8-PowerVDFN package, identified as MLPAK33, and is supplied on tape and reel. It finds application in automotive, industrial, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Ta), 66.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 12.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | MLPAK33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 15 V |
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