PXP018-30QLJ
PXP018-30QL/SOT8002/MLPAK33Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PXP018-30QLJ is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 7.5 A at ambient temperature (Ta) and 19.2 A at case temperature (Tc). With a maximum on-resistance of 18 mOhm at 7.5 A drain current and 10 V gate-source voltage, it minimizes conduction losses. The device has a gate charge of 10.8 nC at 10 V and input capacitance of 447 pF at 15 V. It operates effectively with gate drive voltages between 4.5 V and 10 V, and has a maximum gate-source voltage tolerance of ±20 V. The PXP018-30QLJ is packaged in an 8-PowerVDFN (MLPAK33) for surface mounting and supports a wide operating temperature range of -55°C to 150°C. Its 1.7 W power dissipation at ambient temperature is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 19.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | MLPAK33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 447 pF @ 15 V |
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