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PSMNR90-40SSHJ

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PSMNR90-40SSHJ

MOSFET N-CH 40V 375A LFPAK88

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. PSMNR90-40SSHJ is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 375A at 25°C, with a maximum power dissipation of 375W. The low on-resistance of 0.9mOhm at 25A and 10V drive voltage, coupled with a charge gate (Qg) of 166 nC at 10V, ensures efficient switching performance. The PSMNR90-40SSHJ incorporates a Schottky diode within its body, enhancing its robustness. It is housed in a compact LFPAK88 (SOT1235) surface-mount package, suitable for high-density designs and delivered on tape and reel. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is engineered for reliable operation in automotive and industrial sectors. Key electrical characteristics include an input capacitance (Ciss) of 12888 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 3.6V at 1mA, with a maximum gate-source voltage of ±20V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-1235
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C375A (Tc)
Rds On (Max) @ Id, Vgs0.9mOhm @ 25A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id3.6V @ 1mA
Supplier Device PackageLFPAK88 (SOT1235)
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12888 pF @ 25 V
Qualification-

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