PSMN8R5-100PSQ
MOSFET N-CH 100V 100A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN8R5-100PSQ is a robust N-Channel MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 100A at 25°C, with a maximum power dissipation of 263W (Tc). The device features a low on-resistance of 8.5mOhm at 25A and 10V, facilitated by a gate drive voltage of 10V. Key parameters include a Gate Charge (Qg) of 111 nC at 10V and an input capacitance (Ciss) of 5512 pF at 50V. The PSMN8R5-100PSQ utilizes Metal Oxide technology and is housed in a standard TO-220AB through-hole package, suitable for mounting in various electronic assemblies. It operates within a temperature range of -55°C to 175°C. This MOSFET is widely employed in industrial power supplies, electric vehicle systems, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |
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