PSMN7R8-120PSQ
MOSFET N-CH 120V 70A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN7R8-120PSQ is a N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 120V and a continuous drain current (Id) of 70A at 25°C (Tc), with a maximum power dissipation of 349W (Tc). The low on-resistance is specified at a maximum of 7.9mOhm at 25A and 10V gate drive. Key parameters include a gate charge (Qg) of 167 nC (max) at 10V and input capacitance (Ciss) of 9473 pF (max) at 60V. The MOSFET is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) and is suitable for through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V. This component is frequently utilized in industrial, automotive, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9473 pF @ 60 V |
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