PSMN7R0-30YL,115
MOSFET N-CH 30V 76A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN7R0-30YL-115 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C, with a maximum power dissipation of 51W. The low on-resistance of 7mOhm at 15A and 10V (Vgs) is achieved through advanced MOSFET technology, ensuring efficient power transfer.
The PSMN7R0-30YL-115 is housed in a compact LFPAK56 (Power-SO8) surface mount package, offering excellent thermal performance and suitability for high-density designs. Key electrical characteristics include a gate charge (Qg) of 22 nC (max) at 10V and input capacitance (Ciss) of 1270 pF (max) at 12V. It supports a wide gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.15V (max) at 1mA. This device operates reliably across an extended temperature range of -55°C to 175°C. It finds application in automotive, industrial power, and high-power switching systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 12 V |
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