PSMN6R9-100YSFX
MOSFET N-CH 100V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's PSMN6R9-100YSFX is an N-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 100 A at 25°C (Tc), with a maximum power dissipation of 238 W. The MOSFET utilizes advanced metal oxide technology and is housed in the compact LFPAK56 (Power-SO8) package, suitable for surface mount applications. Key electrical characteristics include a gate charge (Qg) of 50.3 nC at 10 V and a maximum gate-source voltage (Vgs) of ±20 V. Operating at an ambient temperature up to 175°C (TJ), this component is ideal for use in power supply, automotive, and industrial control systems. The PSMN6R9-100YSFX is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 238W |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50.3 nC @ 10 V |
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