PSMN6R5-30MLDX
MOSFET N-CH 30V 65A LFPAK33Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's PSMN6R5-30MLDX is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage and a continuous drain current capability of 65A at 25°C (Tc), with a maximum power dissipation of 51W (Tc). The low on-resistance of 6.5mOhm at 15A and 10V gate-source voltage, combined with a gate charge of 13.6 nC (max) at 10V, ensures minimal conduction and switching losses. Operating across a wide temperature range of -55°C to 175°C (TJ), it is housed in a compact LFPAK33 package (SOT-1210, 8-LFPAK33) suitable for surface mounting. The MOSFET is compatible with drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a threshold voltage of 2.2V at 1mA. This component is commonly deployed in automotive, industrial, and telecommunications power supplies. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1210, 8-LFPAK33 (5-Lead) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | LFPAK33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 817 pF @ 15 V |
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