PSMN6R3-120ESQ
MOSFET N-CH 120V 70A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN6R3-120ESQ is an N-Channel MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 120V and a continuous Drain Current (Id) of 70A at 25°C, with a maximum power dissipation of 405W (Tc). The Rds(on) is specified at a low 6.7mOhm at 25A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 207.1 nC at 10V and an Input Capacitance (Ciss) of 11384 pF at 60V. The device operates across a temperature range of -55°C to 175°C (TJ). Packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA) with through-hole mounting, the PSMN6R3-120ESQ is suitable for use in power supply units, battery management systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 405W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 207.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11384 pF @ 60 V |
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