PSMN6R0-30YL,115
MOSFET N-CH 30V 79A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN6R0-30YL-115 is a 30V, N-Channel Power MOSFET in an LFPAK56 (Power-SO8) surface mount package. This device offers a continuous drain current of 79A at 25°C (Tc) and a maximum power dissipation of 55W (Tc). Key electrical specifications include a low on-resistance of 6mOhm at 15A and 10V gate-source voltage. The device features a gate charge of 24 nC at 10V and an input capacitance of 1425 pF at 12V. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±20V. This component is utilized in applications such as automotive power management and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1425 pF @ 12 V |
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