PSMN5R8-40YS,115
MOSFET N-CH 40V 90A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. presents the PSMN5R8-40YS-115, an N-Channel MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) capability of 90A at 25°C (Tc). The Rds On is specified at a maximum of 5.7mOhm at 15A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 28.8nC (Max) at 10V and an Input Capacitance (Ciss) of 1703pF (Max) at 20V. The device operates across a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 89W (Tc). Packaged in an LFPAK56 (Power-SO8) format, it is supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1703 pF @ 20 V |
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