PSMN5R0-100ES,127
MOSFET N-CH 100V 120A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PSMN5R0-100ES-127 is a 100V N-Channel Power MOSFET in an I2PAK package. This device offers a continuous drain current of 120A at 25°C (Tc) and a maximum power dissipation of 338W (Tc). The low on-resistance is rated at 5mOhm at 25A and 10V gate drive. Key parameters include a gate charge of 170nC @ 10V and input capacitance of 9900pF @ 50V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for high-power switching applications in industries such as automotive and industrial power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 338W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 50 V |
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