PSMN4R8-100PSEQ
MOSFET N-CH 100V 120A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. MOSFET N-Channel, PSMN4R8-100PSEQ. This TO-220AB packaged device offers a 100V drain-source voltage and a continuous drain current of 120A at 25°C (Tj). Featuring a low on-resistance of 5mOhm at 25A and 10V, this N-channel MOSFET boasts a maximum power dissipation of 405W (Tc). Key electrical parameters include a 278 nC gate charge (Qg) at 10V and an input capacitance (Ciss) of 14400 pF at 50V. The device operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 405W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 278 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 50 V |
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