PSMN4R3-80ES,127
MOSFET N-CH 80V 120A I2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN4R3-80ES-127 is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 120A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4.3mOhm at 25A and 10V gate-source voltage. With a maximum power dissipation of 306W (Tc), it is suitable for high-power switching and power management tasks. The PSMN4R3-80ES-127 is housed in an I2PAK (TO-262-3 Long Leads, I2PAK, TO-262AA) package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 111nC (Max) at 10V and input capacitance (Ciss) of 8161pF (Max) at 40V. This MOSFET is utilized in industries such as automotive, industrial power, and telecommunications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8161 pF @ 40 V |
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