PSMN4R0-30YL,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PSMN4R0-30YL-115 is an N-Channel MOSFET designed for demanding power applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 100A at 25°C (Tc). Optimized for efficiency, it exhibits a low on-resistance (Rds On) of 4mOhm at 15A and 10V, with a gate-source voltage (Vgs) drive range of 4.5V to 10V. The MOSFET's high current handling and low thermal resistance are supported by its LFPAK56, Power-SO8 package, also known as SC-100 or SOT-669, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 36.6 nC at 10V and input capacitance (Ciss) of 2090 pF at 12V. With a maximum power dissipation of 69W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is well-suited for use in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2090 pF @ 12 V |
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