PSMN3R9-60PSQ
MOSFET N-CH 60V 130A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PSMN3R9-60PSQ is an N-Channel Power MOSFET designed for high-performance applications. This device features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 130A at 25°C (Tc). The low on-resistance (Rds On) of 3.9mOhm at 25A and 10V drive voltage ensures efficient power delivery. With a maximum power dissipation of 263W (Tc), it is suitable for demanding thermal environments. The device is housed in a TO-220AB package, facilitating through-hole mounting. Key electrical parameters include a gate charge (Qg) of 103 nC at 10V and input capacitance (Ciss) of 5600 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
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